PART |
Description |
Maker |
2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
NS15003 |
20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
MICROSEMI CORP
|
CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
2N6277 2N6275 2N6274 ON0082 |
POWER TRANSISTORS NPN SILICON From old datasheet system 100, 120, 140, 150 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
TDA4605 |
PWM Control IC for SMPS using MOS-Tra... Control IC for Switched-Mode Power Supplies using MOS-Transistors From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE NPN TRANSISTOR POWER MODULE 140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
SFT2010 SFT2012 SFT2012_3 SFT2010-3 SFT2010_3 SFT2 |
200 AMP 100-140 VOLTS NPN TRANSISTOR
|
Solid States Devices, Inc
|
CSD362 CSD362N CSD362O CSD362R |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE. NPN PLASTIC POWER TRANSISTOR
|
Continental Device India Limited Powerex Power Semiconductors
|
AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs 2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC 2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8 2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23 2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC 2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
|
JANSR2N7403 FN4486 |
22 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA From old datasheet system 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
SES12VD923-2U |
140 Watts peak pulse power
|
Surge Components
|
APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|